| PART |
Description |
Maker |
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| BB512 Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V)
From old datasheet system
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V) 470 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BB565 BB565-02V BB545 |
Silicon Variable Capcitance Diode
Varactordiodes - Silicon tuning diode for UHF and VHF TV tuners
Varactordiodes - Silicon variable capacitance diode for UHF TV tuners
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 1T362 |
Silicon Variable Capacitance Diode Designed For Electronic Tuning Of TV Tuner(硅可变电容二极管（用于电视调谐器的电子调谐）) 硅变容二极管设计电子调谐电视调谐器（硅可变电容二极管（用于电视调谐器的电子调谐）
Silicon Variable Capacitance Diode
|
Sony, Corp.
Sony Corporation
|
| MPAT-05840643-4015 MPAT-06400720-4015 MPAT-0750085 |
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
6400 MHz - 7200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
1500 MHz - 1800 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
950 MHz - 1750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.2 dB INSERTION LOSS-MAX
1275 MHz - 1480 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
| 1N4795A 1N4811A 1N4811B 1N4815 1N4797B |
39 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
56 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| MA4X348 |
Silicon planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA30W-A MA30W-B MA30-A MA30 MA30-B |
Silicon epitaxial planer type variable resistor SILICON, STABISTOR DIODE
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MA2B27QB MA2B027 MA2B0270A MA2B0270B MA2B027B MA2B |
Silicon epitaxial planar type variable resistor SILICON, PIN DIODE, DO-35
CANKPT02E16-26SX
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| BB640 Q62702-B589 |
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners Bd I)
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I)
From old datasheet system
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Siemens Group
|
